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eKonferencije.com: Consideration researches on high temperature, high power SiC devices

Consideration researches on high temperature, high power SiC devices

1. Voican Cristiana

This paper surveys the present status of SiC based semiconductor electronics within the context of identifying areas where technological maturation is most needed, and speculating on the prospects for resolution of crucial technological obstacles. Recent achievements include the monolithic realization of SiC integrated circuit operational amplifiers and digital logic circuits, as well as significant improvements to epitaxial and bulk crystal growth processes that will impact the overall viability of this rapidly emerging technology.

Тематска област: Производне технологије и инжењерство

Уводни рад: Да

Датум: 29.12.2010.

Бр. отварања: 828

11th International Conference on Accomplishments in Mechanical and Industrial Engineering


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