1. Tijana Kevkic, PMF Kosovska Mitrovica, Serbia
Abstract: High substrate doping and small effective oxide thickness in the actual MOS transistors often cause severe band bending on the Si side of the Si-SiO2 interface. The resulting potential well becomes narrow enough to cause significant energy quantization of the carriers in the direction perpendicular to the interface. The compact MOS transistor models used for circuits simulation need to incorporate the quantum mechanical effects in an approximate and efficient manner. In this paper an approximate description of surface potential model, which include a quantum mechanical correction, will be developed. This explicit and analytical model is based on smoothing functions and parameters so that physical approximate expressions could be available in the weak and strong inversion. The comparison with numerical data shows that the solution gives an accurate approximation of surface potential for nanoscale MOS transistors in all regions of operation.
Кључне речи :
Тематска област:
СИМПОЗИЈУМ А - Наука материје, кондензоване материје и физикa чврстог стања
Датум:
27.05.2015.
Contemporary Materials 2015 - Савремени Материјали
Датотека уз рад
(145.43 KB)
